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Effect of Chelating Agent on Reducing Galvanic Corrosion between Cobalt and Copper in Alkaline Slurry

机译:螯合剂对降低碱性浆料中钴和铜之间电偶腐蚀的影响

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Cobalt has been as the copper-interconnects barrier in the ultra-large scale integrated circuit, but serious galvanic corrosion happens between cobalt and copper during the process of barrier polishing. The effects of chelating agent on reducing galvanic corrosion between cobalt and copper were investigated in this work. The result of potentiodynamic polarization measurements, static etching corrosion experiments and polishing experiments indicated that the chelating agent could inhibit the corrosion of Co by increasing the pH of the slurries with the hydroxyl itself contained and prevent the dissolution of the mixture oxides passive film on cobalt surface. While the passive film on copper surface dissolved when the chelating agent was added and the concentration was increased to the 5 ml/L. Cobalt had higher erosion potential than copper and the galvanic corrosion could be prevented effectively when the difference of open circuit potential of them decreased to 20 mV. (C) 2016 The Electrochemical Society. All rights reserved.
机译:钴一直是超大规模集成电路中的铜互连阻挡层,但是在阻挡层抛光过程中,钴和铜之间会发生严重的电化腐蚀。在这项工作中,研究了螯合剂对减少钴和铜之间电偶腐蚀的影响。电位动力极化测量,静态蚀刻腐蚀实验和抛光实验的结果表明,螯合剂可以通过提高含羟基的浆料的pH值来抑制Co的腐蚀,并防止混合氧化物钝化膜在钴表面的溶解。 。加入螯合剂后,铜表面的钝化膜溶解,浓度增加到5 ml / L。钴的腐蚀电位比铜高,当它们的开路电位差减小到20 mV时,可以有效防止电腐蚀。 (C)2016年电化学学会。版权所有。

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