The effect of thermal treatment on the characteristic parameters of Ni/-, Ti/- and NiTi alloy/n-GaAs schottky diodes

摘要

Ni/-. Ti/- and NiTi alloy/n-GaAs Schottky barrier diodes (SBDs) have been fabricated And annealed for 5 min in the temperature range of l00-650℃ with steps of 50 or 100℃ The value ofфb and n for as-deposited Ni/-, Ti/- and NiTi alloy/n-GaAsSBDs has been determined to be 0.73, 0.64 and 0.68 eV and 1.02, 1.08 and 1.10. respectively. For the NiTi alloy/n-GaAs diode, while the ideality factor remains unchanged up to 400℃ annealing, it decreased to 1.02 at 500℃. An additional barrier heightenhancement with increased annealing temperature occurs while the ideality factor remains close to unity. Thermal stability of the NiTi alloy/n-GaAs diode is maintained up to an annealing temperature of 500 C. It has been concluded that the NiTialloy/n-GaAs SBD contact has a better performance than the Ni/- and Ti/n-type.