Hot-carrier injections in SiO2 Review

摘要

We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage currents in very thin (< similar to 5 nm) gate-oxide. (C) 1998 Elsevier Science Ltd. References: 179