Comparative X-ray PhotoelectronSpectroscopy Study of Plasma EnhancedChemical Vapor Deposition and MicroPressure Chemical Vapor Deposition ofPhosphorus Silicate Glass Layers after RapidThermal Annealing

摘要

In this paper the bonding state of Phosphorus Silicate Glass (PSG)layers obtained by two different technological approaches, i.e. in two typesof reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and MicroPressure Chemical Vapor Deposition (μPCVD) are investigated employing XPSand AES. The PSG layers are deposited at 380°C and 420°C in correspondingreactors. XPS and AES analyses show that Si2p peak recorded from PECVDlayers are not as expected at their position characteristics of silicon dioxide butinstead they are at the characteristic of elemental Silicon. Plasma enhancementduring deposition leads to less oxidized and more inhomogeneous layer. Afterrapid thermal annealing the Si2p peak is situated at position characteristic ofsilicon dioxide.