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Investigation of electrochromic tungsten trioxide thin films prepared by the ILGAR method

机译:ILGAR法制备电致变色三氧化钨薄膜的研究

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摘要

An ion layer gas reaction dip coating process for the deposition of tungsten trioxide has been developed.Thin films of electrochromic tungsten trioxide with thicknesses of up to 150 nm were prepared.The films were found to be microcrystalline by X-ray diffraction analysis.The growth rate of the films was measured by profilometry.The chemical diffusion coefficient of lithium was investigated as a function of the concentration of lithium by the electrochemical galvanostatic intermittent titration technique.The chemical diffusion coefficient D was found to increase slightly from 7x10~(-12)to 3x10~(-1)cm~2/s,with x increasing from 0.2 to 0.8 in Li_xWO_3.
机译:开发了一种用于三氧化钨沉积的离子层气相反应浸涂工艺,制备了厚度不超过150 nm的电致变色三氧化钨薄膜,通过X射线衍射分析发现该薄膜为微晶。采用电化学恒电流间歇滴定法研究锂的化学扩散系数与锂浓度的关系,发现化学扩散系数D从7x10〜(-12)略有增加。到3x10〜(-1)cm〜2 / s,在Li_xWO_3中x从0.2增加到0.8。

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