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Calculated strand breaks from (125)I in coiled DNA.

机译:从卷曲的DNA中的(125)I计算出的链断裂。

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摘要

PURPOSE: DNA single strand breaks (SSB) and double-strand breaks (DSB) induced by Auger electrons from incorporated (125)I decay were calculated using a B-DNA model to assess contributions from direct and OH damage and effects of higher-order structure. Three decay sites, linker DNA, nucleosome, and two adjacent nucleosomes, were assessed and compared to experimental data. METHOD: A Monte Carlo track structure code for electron was used to track electrons, OH and H radicals through linear and a higher-order model of B-DNA. Direct and indirect DNA hits were scored and used to determine SSB and DSB. RESULTS: The three different (125)I decay locations produced different number of DSBs and fraction of radical damage. The average number of DSB per (125)I decay was 0.83, 0.86 and 1.33, respectively, for the three sites. OH radical attack contributed to or exclusively caused 70%, 57%, and 50%, of the DSBs located in the entire model. When only 10 base pairs on either side of the incorporation site were considered, radical damage contributions were 40%, 25% and 67%, respectively. Locations distant from the site of incorporation, however, consistently yielded 70-80% of the DSB from radical attack. CONCLUSIONS: Coiling of DNA can greatly change both the absolute number of DSB per incorporated (125)I decay and the relative contributions of radical damage to the local site of decay and, to a lesser extent, the average over all DNA. Higher order structure only slightly affects the number and quality of DNA damage to distant locations, which is mostly from radical attack.
机译:目的:利用B-DNA模型计算掺入的(125)I衰变的俄歇电子诱导的DNA单链断裂(SSB)和双链断裂(DSB),以评估直接和OH损伤的贡献以及高阶效应结构体。评估了三个衰变位点,接头DNA,核小体和两个相邻的核小体,并将其与实验数据进行了比较。方法:使用电子的蒙特卡洛轨道结构代码通过B-DNA的线性和高阶模型跟踪电子,OH和H自由基。对直接和间接DNA命中进行评分并用于确定SSB和DSB。结果:三个不同的(125)I衰变位置产生了不同数量的DSB和部分自由基损伤。在这三个位置,每(125)I衰减的DSB平均数分别为0.83、0.86和1.33。 OH自由基攻击导致或仅引起整个模型中DSB的70%,57%和50%。当仅考虑掺入位点两侧的10个碱基对时,自由基损伤的贡献分别为40%,25%和67%。但是,远离合并地点的位置始终能从根本进攻中获得70%至80%的DSB。结论:DNA的卷曲可以极大地改变每个掺入的(125)I衰变的DSB绝对数,以及自由基损害对衰变的局部位点的相对贡献,并且在较小程度上改变所有DNA的平均值。高阶结构仅轻微影响DNA对远端位置的破坏的数量和质量,这主要来自自由基的攻击。

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