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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Characterization of ta-C and granular Co-C films prepared by pulsed filtered vacuum arc deposition
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Characterization of ta-C and granular Co-C films prepared by pulsed filtered vacuum arc deposition

机译:通过脉冲过滤真空电弧沉积制备的ta-C和颗粒状Co-C膜的表征

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A pulsed filtered vacuum are deposition system was used to prepare ta-C thin films and granular Co-C films. The ta-C films prepared at various substrate bias voltages were characterized using Raman spectroscopy and spectroscopic ellipsometry of which the results confirmed that these ta-C films exhibit high sp(3) fraction of over 80%. The composition of the granular Co-C films prepared by the same system was determined by non-Rutherford backscattering spectrometry. The properties of these Co-C films, as deposited and after vacuum annealing at various temperatures, were studied using Raman spectroscopy, electrical measurements, magnetic measurements by a SQUID magnetometer, atomic force microscopy and magnetic force microscopy. It was found that the dependence of the Raman spectra of these films on annealing temperature was associated with the formation and dissociation of a cobalt carbide phase and the graphitization of amorphous carbon. The magnetic properties showed complicated composition and annealing temperature dependence. The optimum annealing temperature for the maximum coercivity was found to depend on the composition of the film. For a film of Co65C35 after annealing at 623K in vacuum for one hour, the coercivity was measured to be 460 Oe at 300K and 1380 Oe at 3K Clear MFM images of the domain structures were observed for films after annealing at sufficiently high temperature, showing that there was perpendicular magnetic anisotropy in these films. A nearly-temperature-independent electrical resistance in the range from 20K to 300K was also observed A more detailed analysis indicated that the low temperature electrical transport is consistent with a theory for granular metal films. [References: 21]
机译:使用脉冲过滤真空沉积系统制备ta-C薄膜和粒状Co-C薄膜。使用拉曼光谱和椭圆偏振光谱法对在各种衬底偏置电压下制备的ta-C膜进行了表征,其结果证实这些ta-C膜显示出80%以上的高sp(3)分数。通过非卢瑟福背散射光谱法测定由相同系统制备的粒状Co-C膜的组成。使用拉曼光谱,电学测量,SQUID磁强计的磁测量,原子力显微镜和磁力显微镜研究了这些Co-C膜在不同温度下沉积和真空退火后的性能。已发现这些膜的拉曼光谱对退火温度的依赖性与碳化钴相的形成和解离以及非晶碳的石墨化有关。磁性表现出复杂的组成和退火温度依赖性。发现最大矫顽力的最佳退火温度取决于膜的组成。对于在623K真空下退火1小时后的Co65C35薄膜,在300K下矫顽力测得为460 Oe,在3K下薄膜测得矫顽力为1380 Oe。在足够高的温度下退火后,观察到薄膜的畴结构清晰MFM图像,表明在这些膜中存在垂直的磁各向异性。还观察到了几乎与温度无关的电阻,范围为20K至300K。更详细的分析表明,低温电传输与粒状金属膜的理论一致。 [参考:21]

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