Band structure investigation of strained Si{sub}(1-x)Ge{sub}x/Si coupled quantum wells

摘要

The band structure of Si{sub}(1-x)Ge{sub}x/Si coupled quantum wells (CQW) was calculated with the 8-band k · p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si·0.6Ge·0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20～60 A while well width varies between 30～110 A. Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.