CHARACTERIZATION OF (Ba_(0.5)Sr_(0.5))TiO_3 THIN FILMS DEPOSITED ONTO METALORGANIC CHEMICAL VAPOR DEPOSITED (Ba,Sr)RuO_3 (BSR) SEED LAYERS FOR VOLTAGE TUNABLE DEVICES

摘要

The conducting oxide (Ba,Sr)RuO_3 (BSR), which offered not only the appropriate match in structure but also the chemical compatibility with (Ba,Sr)TiO_3 (BST), was investigated as seed layers to obtain a high tunability and dielectric constant of BST films. The tunability and dielectric constant of the (100) textured BST films abruptly increased with increasing BSR seed layer thickness and showed about 68 percent and 1300 at seed layer of 150A, respectively. Higher tunability and dielectric constant of BST films deposited onto BSR seed layers have been attributed to the suppression of low dielectric layer formation and to the nonexistence of thermal stress by lattice mismatch at BST/Pt interface.