Lowering of Crystallization Temperature Or Sol-Gel Derived Pb(Zr,Ti)O_3 Thin Films

摘要

We have studied the low temperature preparation of sot-gel derived Pb(Zr_(0.4)Ti_(0.6))O_3 thin films on Pt/SiO_2/Si substrates, we found that new stable sol-gel solutions and the modified film preparation processes were effective in lowering the crystallization temperature. The film processed at 450 deg C from the new solution had better ferroelectric properties than the films from other conventional solutions. Thinning of the annealed film (thin film annealing) and piling of the annealed thin films (multi-annealing) were especially effective in lowering the crystallization temperature, as compared with the conventional preparation process of annealing of piled amorphous films (single-annealing). The combination of the new solution and the modified film preparation processes enabled PZT film to crystallize at 435 deg C and PZT film crystallized at 450 deg C to have good ferroelectric properties. And we discussed the mechanism of nucleation and grain growth of PZT films, which were connected with the stress.