HIGH QUALITY SILICON-BASED A1N THIN FILMS FOR MEMS APPLICATION

摘要

Aluminum nitride is an attractive piezoelectric material for MEMS devices such as bulk acoustic wave (BAW) devices. (002)-oriented A1N films were deposited on Si, Al and Pt by reactive sputtering. Optimized A1N (002) peak reaches a full width at half maximum (FWHM) of 5.6°. Auger electron spectroscopy is used to analyze the oxygen contamination of films. To find the suitable electrode material for device application, the growth mechanism of A1N crystallites on different substrates is also discussed. Based on sputtered A1N films, the prototype of A1N thin film bulk acoustic resonator (TFBAR) was fabricated successfully.