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首页> 外文期刊>Sensors and Actuators, A. Physical >Piezoelectric thin films for MEMS applications-A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering
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Piezoelectric thin films for MEMS applications-A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering

机译:用于MEMS的压电薄膜-r.f.法在Si上生长的PZT,0.7PMN-0.3PT和0.9PMN-0.1PT薄膜的比较研究磁控溅射

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摘要

PMN-PT (0.7), PMN-PT (0.9) and PZT (54/46) thin films were deposited by sputtering on silicon substrate covered bottom TiOx/Pt electrodes. The top and lower electrodes are grown by r.f. sputtering. The objective in this paper here is to compare the dielectric, ferroelectric and piezoelectric properties of different materials, and material compositions, in thin films form. For these films the electric, ferroelectric and piezoelectric properties have been determined and compared to PZT films of the same thickness. The comprehensive characterization process clearly reveals the merits of each film composition for a particular application. The results for the three film compositions are presented and discussed. (C) 2008 Elsevier B.V. All rights reserved.
机译:通过溅射在覆盖硅衬底的底部TiOx / Pt电极上沉积PMN-PT(0.7),PMN-PT(0.9)和PZT(54/46)薄膜。顶部和底部电极的生长系数为r.f.溅射。本文的目的是比较薄膜形式的不同材料以及材料成分的介电,铁电和压电特性。对于这些薄膜,已经确定了其电,铁电和压电性能,并与相同厚度的PZT薄膜进行了比较。全面的表征过程清楚地揭示了每种膜组合物在特定应用中的优点。介绍并讨论了三种薄膜组合物的结果。 (C)2008 Elsevier B.V.保留所有权利。

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