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Integration of Piezoelectric PZT Thin Films with Internal Electrodes into an Actuator Structure for MEMS Applications

机译:压电PZT薄膜和内部电极集成到MEMS应用的执行器结构中

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摘要

This paper presents the Finite-Element-Method (FEM) analyses, the processing, and the characterization of micro cantilever beams, which are driven by the transversal piezoelectric effect of two PbZr_(0.45)Ti_(0.55)O_3 (PZT) thin films with an internal platinum electrode. SiO_2/Si_3N_4 is used as elastic substrate for this stack. For the development of this thin film bimorph silicon bulk micro machining is used in combination with chemical solution deposition (CSD), sputter technology and reactive ion etching (RIE). For electrical and piezoelectric characterization of the PZT films CV-, hysteretic, and double beam laser interferometer measurements are carried out. The findings are compared to the FEM analyses and the results of a single piezoelectric layer design [1].
机译:本文介绍了由两个PbZr_(0.45)Ti_(0.55)O_3(PZT)薄膜的横向压电效应驱动的微悬臂梁的有限元方法(FEM)分析,处理和表征。内部铂电极。 SiO_2 / Si_3N_4用作该堆叠的弹性基板。为了开发这种薄膜,双晶硅体微机械加工与化学溶液沉积(CSD),溅射技术和反应离子蚀刻(RIE)结合使用。为了对PZT膜进行CV-的电和压电表征,执行了磁滞和双光束激光干涉仪测量。将结果与有限元分析和单个压电层设计的结果进行比较[1]。

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