Fabrication and Characterization of MFISFET using CMOS Process for Single Transistor Memory Application

摘要

Metal Ferroelectric Insulator Semiconductor Fieid Effect Transistors (MHSFET) were fabricated using CMOS process. The PZT/TiO_2 combined layer was used as a gate dielectric layer of MFISFET device. The memory window of p type MFISFET was about 2.5 V. The threshold voltages of p-MHSFET and n-MFISFET are -1.8 V and 3.8V, respectively. The Id-Vd characteristic shows a nonvolatile memory function through write and read operation. The retention property of p-MFISFET is examined by reading drain currents after writing to gate. About 15 percent reduction in the drain current is observed when it is read after 100 minutes.