Far infrared photoconductivity studies in silicon blocked impurity band structures

摘要

We report two novel features in the photoconductive response of a boron doped Blocked Impurity Band (BIB) structure. In this structure which comprises a pure and a very doped photoconductive layer between ohmic contacts, spectra of impurities at an interface with the pure layer were evidenced in a process involving field assisted hopping among excited states. In addition, a peculiar photovoltaic response, with open circuit photovoltage surprisingly independent of the incident photon flux was measured and analysed.