'Level Adjusting Circuit And Gate Driving Device Including The Same' in Patent Application Approval Process (USPTO 20220224328)

摘要

The following quote was obtained by the news editors from the background information supplied by theinventors: “Wide-bandgap semiconductor (also known as the third generation semiconductor) materialsinclude silicon carbide (SiC) and gallium nitride (GaN). The third generation semiconductor materialshave favorable characteristics such as relatively high carrier mobility and a relatively large band-gap. Forexample, a semiconductor device manufactured using GaN material (also known as GaN devices) may havea figure of merit (FOM) that is 5 to 10 times higher than that of a semiconductor device manufacturedusing silicon material. As a result, the third generation semiconductor materials may be employed tomanufacture devices for more advanced applications such as high-voltage power devices and high-frequencycommunication devices.