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Photon absorption in resonant-cavity-enhanced GaAs far-infrared detectors

机译:共振腔增强GaAs远红外探测器中的光子吸收

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摘要

Interface reflection has been demonstrated to play an important role in GaAs multilayer homojunction far-infrared (FIR) detectors. A transfer matrix method that is able to provide a true optical field distribution within an FIR detector has been employed to optimize photon absorption and structure. The dependence of photon absorption on the reflectivity and the phase shift of the bottom mirror in a resonant-cavity-enhanced GaAs FIR detector has been investigated. Weak wavelength selectivity has been observed for both resonant and off-resonant FIR, which is a unique advantage for detector application. In comparison with the experimental result, a 20.8% increase in quantum efficiency was found in an optimized FIR detector.
机译:已经证明界面反射在GaAs多层同质结远红外(FIR)检测器中起着重要作用。已经采用能够在FIR检测器内提供真实光场分布的传递矩阵方法来优化光子吸收和结构。研究了谐振腔增强的GaAs FIR检测器中光子吸收对底部反射镜的反射率和相移的依赖性。对于共振和非共振FIR均观察到弱的波长选择性,这对于检测器应用而言是独特的优势。与实验结果相比,在优化的FIR检测器中发现量子效率提高了20.8%。

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