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Stretchable and conformable synapse memristors for wearable and implantable electronics

机译:可伸缩的、一致的突触记忆电阻器可穿戴和植入式电子

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Stretchable and conformable synapse memristors that can emulate the behaviour of the biological neural system and well adhere onto the curved surfaces simultaneously are desirable for the development of imperceptible wearable and implantable neuromorphic computing systems. Previous synapse memristors have been mainly limited to rigid substrates. Herein, a stretchable and conformable memristor with fundamental synaptic functions including potentiation/depression characteristics, long/short-term plasticity (STP and LTP), "learning-forgetting-relearning" behaviour, and spike-rate-dependent and spike-amplitude- dependent plasticity is demonstrated based on highly elastic Ag nanoparticle-doped thermoplastic polyurethanes (TPU : Ag NPs) and polydimethylsiloxane (PDMS). The memristor can be well operated even at 60% strain and can be well conformed onto the curved surfaces. The formed conductive filament (CF) obtained from the movement of Ag nanoparticle clusters under the locally enhanced electric field gives rise to resistance switching of our memristor. These results indicate a feasible strategy to realize stretchable and conformable synaptic devices for the development of new-generation artificial intelligence computers.
机译:可伸缩的、一致的突触记忆电阻器能模仿生物的行为神经系统和坚持到弯曲同时表面是可取的听不清可穿戴和发展植入式神经形态计算系统。以前突触主要记忆电阻器局限于刚性基板。可伸缩的、一致的忆阻器基本突触功能包括增强作用/抑郁特点,长期/短期可塑性(STP和LTP),“learning-forgetting-relearning”行为spike-rate-dependent和spike-amplitude -相关的可塑性是演示了基于高弹性Ag nanoparticle-doped热塑性聚氨酯(TPU: Ag NPs)聚二甲基硅氧烷(PDMS)。操作甚至在60%应变,可以符合到曲面。导电纤维(CF)获得的运动的Ag纳米簇本地增强电场产生抵抗我们记忆电阻的切换。结果表明一个可行的策略来实现可伸缩的和整合突触设备新一代人工的开发智能电脑。

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