OBSERVATION OF X-RAY ENERGY RESPONSES OF SILICON SEMICONDUCTOR DETECTORS AND A NEW THREE DIMENSIONAL THEORETICAL MODEL FOR THE SIGNALS OF MULTICHANNEL DETECTORS

摘要

The X-ray energy characterization of silicon semiconductor detectors is investigated using synchrotron radiation in the 5-20 keV energy range. These data indicate that neither the commonly believed conventional theoretical model for the X-ray responseusing the depletion layer thickness of the detector nor a recently proposed MIT model using its wafer thickness as the X-ray sensitive layer can explain the response data. On the other hand, our new theoretical prediction using both the depletion layersensitivity and the X-ray response from a three-dimensional charge diffusion effect in the field-free substrate region of the detector can well fit the response data.