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Energy dispersive semiconductor X-ray detector with improved silicon detector

机译:具有改进的硅探测器的能量色散半导体X射线探测器

摘要

An energy dispersive X-ray detector assembly has a detector element of a high-purity silicon substrate with a pair of electrodes, one on either side of the silicon substrate, to create an depletion layer in the silicon substrate when an electric field is created between the electrodes to enable the detection of X-rays. The silicon substrate has a resistivity of at least 10 k&OHgr;·cm and a thickness in the incident direction of the X-rays of approximately 3 to 5 mm. A refrigerator system, such as a closed cycle gas circulation refrigerator, can be used to cool the detector element to enable the provision of a compact detector assembly.
机译:能量色散X射线检测器组件具有一个高纯度硅衬底的检测器元件,该检测器元件具有一对电极,每个电极在硅衬底的两侧,当在两个衬底之间产生电场时在硅衬底中产生耗尽层。电极以检测X射线。硅基板的电阻率至少为10kΩ·cm,并且在X射线的入射方向上的厚度为大约3mm至5mm。诸如封闭循环气体循环制冷机的制冷机系统可以用于冷却检测器元件,以使得能够提供紧凑的检测器组件。

著录项

  • 公开/公告号US6153883A

    专利类型

  • 公开/公告日2000-11-28

    原文格式PDF

  • 申请/专利权人 HORIBA LTD.;

    申请/专利号US19980036396

  • 发明设计人 SHIGETOSHI ARAI;

    申请日1998-03-06

  • 分类号G01T1/24;

  • 国家 US

  • 入库时间 2022-08-22 01:06:29

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