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Scaling of graphene integrated circuits

机译:石墨烯集成电路规模的扩大

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The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 mu m gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing.
机译:晶体管规模减少的影响(扩展)现实的多阶段的速度集成电路(ic)代表了主要一个给定的晶体管的性能指标技术。石墨烯电子、缩放的努力迄今为止而不是专注于个人晶体管多级ICs。石墨烯ICs基于晶体管从3.3到0.5μm通道长度和不同通道宽度、长度和厚度。每阶段是最短的门延迟的31 p获得亚微米石墨烯ROs振荡在4.3 GHz,最高的振荡在任何严格的频率获得低维材料的日期。约翰逊的基本限制,显示可以使用石墨烯ICs在高在应用程序与小电压频率摇摆。

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