首页> 外文期刊>Applied Catalysis, B. Environmental: An International Journal Devoted to Catalytic Science and Its Applications >Metal oxide top layer as an interfacial promoter on a ZnIn2S4/TiO2 heterostructure photoanode for enhanced photoelectrochemical performance
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Metal oxide top layer as an interfacial promoter on a ZnIn2S4/TiO2 heterostructure photoanode for enhanced photoelectrochemical performance

机译:金属氧化物顶层作为ZnIn2S4 / TiO2异质结构光阳极上的界面促进剂,可增强光电化学性能

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摘要

We designed metal oxide coated ZnIn2S4/TiO2 (ZT) heterostructure photoanodes for enhanced photoelectrochemical performance via hydrothermal and dip-coating methods. The effects of thin metal oxide coating layers, such as TiO2, Al2O3, and SiO2, on the structural, morphological, optical, and photoelectrocatalytic activity of ZT photoanodes were investigated in detail. The metal oxide coating layers significantly enhanced the photoelectrochemical performance of ZT in the following order: SiO2/ZT>Al2O3/ZT>TiO2/ZT>ZT, all at pH 11.5 under simulated one sun illumination. A two-fold boost in the photocurrent density of ZT was recorded after a surface coating of a thin SiO2 layer among the studied metal oxide layers. The charge transfer resistance measured from the electrochemical impedance spectroscopy (EIS) analysis was less for the SiO2/ZT photoanode, indicating enhanced charge separation between the oxide surface layer and electrolyte. The enhanced photoelectrochemical performance due to the thin SiO2 coating was attributed to the improved interface properties that led to the effective charge transfer processes in the vicinity of the electrolyte. (C) 2015 Elsevier B.V. All rights reserved.
机译:我们设计了金属氧化物涂层的ZnIn2S4 / TiO2(ZT)异质结构光阳极,以通过水热和浸涂方法增强光电化学性能。详细研究了诸如TiO2,Al2O3和SiO2之类的薄金属氧化物涂层对ZT光阳极的结构,形态,光学和光电催化活性的影响。金属氧化物涂层按以下顺序显着增强了ZT的光电化学性能:SiO2 / ZT> Al2O3 / ZT> TiO2 / ZT> ZT,所有这些在模拟的1个太阳光照下的pH均为11.5。在所研究的金属氧化物层中,薄SiO2层的表面被覆后,ZT的光电流密度提高了两倍。对于SiO2 / ZT光电阳极,通过电化学阻抗谱(EIS)分析测得的电荷转移电阻较小,表明氧化物表面层和电解质之间的电荷分离增强。由于薄的SiO2涂层而增强的光电化学性能归因于界面性能的改善,这导致了电解质附近的有效电荷转移过程。 (C)2015 Elsevier B.V.保留所有权利。

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