Magnetic multilayer device for e.g. magnetic field sensor, has magnetic metallic layers with magnetic element, so that interfacial magnetic anisotropy occur perpendicular to plane of layers at metallic layer and oxide layer interface

摘要

The magnetic metallic layers consist of a magnetic element. The interfacial magnetic anisotropy occur perpendicular to the plane of layers at the interface of metallic layers and the oxide layers in a temperature range equal to or larger than ambient temperature to orient the magnetization of metallic layers in a direction perpendicular to the plane of the layers. Independent claims are included for the following: (1) method for producing magnetic multilayer device; (2) method of using magnetic memory; and (3) method for using logic gate.