The splitting of electron states in Ge/Si nanosystem with germanium quantum dots

摘要

It is shown that electron tunneling through a potential barrier that separates two quantum dots of germanium leads to the splitting of electron states localized over spherical interfaces (a quantum dot - a silicon matrix). The dependence of the splitting values of the electron levels on the parameters of the nanosystem (the radius a of germanium quantum dot, as well as the distance D between the surfaces of the quantum dots) is obtained. It is shown that, the splitting of electron levels in the quantum dot chain of germanium causes the appearance of a zone of localized electron states, which is located in the bandgap of silicon matrix. It is found that the motion of a charge-transport exciton along a chain of germanium quantum dots of germanium causes an increase in photoconductivity in the nanosystem.