Local Structure of Ge/Si(100) Self-Assembled Quantum Dot

摘要

Local structure of uncapped and Si-capped Ge quantum dots grownon Si(100) has been probed by X-ray absorption fine structure spectroscopy. It is found that the uncapped Ge dots are partially oxidized and partially alloyed with Si. The amount of Ge present in the Ge phase is found to be about 20-30%. In the Si-capped sample, Ge is found to be dissolved in silicon, the fraction of Ge atoms existing as pure Ge phase being not more than 10%.