...
首页> 外文期刊>Physica, B. Condensed Matter >Low loss surface acoustic wave SAW devices based on Al1-xMxN (M=Cr, Y, Sc) thin films
【24h】

Low loss surface acoustic wave SAW devices based on Al1-xMxN (M=Cr, Y, Sc) thin films

机译:基于Al1-XMXN(M = Cr,Y,SC)薄膜的低损耗表面声波锯装置

获取原文
获取原文并翻译 | 示例

摘要

In this work, the coupling-of-modes (COM) approach and P-matrix model are used to investigate the frequency response of a two-port surface & nbsp;acoustic wave & nbsp;SAW delay line based on & nbsp;piezoelectric & nbsp;AlN & nbsp;doped with & nbsp;transition metals. The elastic and & nbsp;piezoelectric properties & nbsp;of Al1-xMxN (M & nbsp;=& nbsp;Cr, Y, Sc)& nbsp;thin films & nbsp;are theoretically investigated using the & nbsp;density functional theory & nbsp;(DFT). The results revealed that doping with Cr at x & nbsp;=& nbsp;25% increases the piezoelectric response up to 288% compared to pure AlN, which is better than results obtained by others transition metal (Sc, Y)& nbsp;dopants. The frequency response of a two-port SAW delay line IDT/Al1-xMxN (M & nbsp;=& nbsp;Cr, Y, Sc)/Si shows that increasing dopants (Cr, Y and Sc) concentration considerably enhances the insertion loss and causes a significant shift down in the operating frequency. The obtained results are helpful in the design and fabrication of acoustic sensors and resonators with improved performances.
机译:在这项工作中,模式耦合(COM)方法和P矩阵模型被用于研究双端口表面的频率响应;声波;基于;压电式;AlN;掺杂;过渡金属。弹性和;压电性能;Al1 xMxN(M=Cr,Y,Sc)的;薄膜;使用;密度泛函理论;(DFT)。结果显示,在x= ;与纯AlN相比,25%可将压电响应提高至288%,这比其他过渡金属(Sc,Y)获得的结果要好;兴奋剂。双端口SAW延迟线IDT/Al1 xMxN(M=Cr,Y,Sc)/Si的频率响应表明,增加掺杂剂(Cr,Y和Sc)浓度会显著提高插入损耗,并导致工作频率显著降低。所得结果有助于设计和制造性能更好的声传感器和谐振器。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号