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首页> 外文期刊>Journal of the European Ceramic Society >Dielectric breakdown toughness from filament induced dielectric breakdown in borosilicate glass
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Dielectric breakdown toughness from filament induced dielectric breakdown in borosilicate glass

机译:硼硅酸盐玻璃致丝诱导介电击穿的介电击穿韧性

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摘要

The dielectric breakdown strength of borosilicate glass was measured as a function of the length of a conducting filament in order to determine the critical energy release for the growth of a breakdown channel. The concept is similar to the experimental determination of the toughness in fracture mechanics and based on a Griffith type model for the electrical energy release rate in dielectric materials with space charge limited conductivity. By Focused-Ion-Beam-milling and Pt-deposition, up to 100 mu m long conductive channels were fabricated in 163 mu m thick borosilicate glass substrates. The dielectric breakdown strength of substrates with filaments longer than 30 mu m could be very well described by a 1/root filament length-dependence predicted by the model Schneider, 2013. With filament length these results for the first time a critical energy release rate for dielectric breakdown was determined being 6.30 +/- 0.95 mJ/m.
机译:为了确定击穿通道生长的临界能量释放,测量了硼硅酸盐玻璃的介电击穿强度与导电灯丝长度的函数关系。该概念类似于断裂力学中韧性的实验测定,并基于具有空间电荷限制导电性的介电材料中电能释放率的格里菲斯模型。通过聚焦离子束研磨和铂沉积,在163μm厚的硼硅酸盐玻璃衬底上制备了长达100μm的导电通道。灯丝长度超过30μm的基板的介电击穿强度可以很好地用Schneider模型预测的1根灯丝长度关系来描述,2013年。根据灯丝长度,这些结果首次确定了介电击穿的临界能量释放率为6.30+/-0.95 mJ/m。

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