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Dielectric breakdown toughness from filament induced dielectric breakdown in borosilicate glass

机译:硼硅酸盐玻璃致丝诱导介电击穿的介电击穿韧性

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The dielectric breakdown strength of borosilicate glass was measured as a function of the length of a conducting filament in order to determine the critical energy release for the growth of a breakdown channel. The concept is similar to the experimental determination of the toughness in fracture mechanics and based on a Griffith type model for the electrical energy release rate in dielectric materials with space charge limited conductivity. By Focused-Ion-Beam-milling and Pt-deposition, up to 100 mu m long conductive channels were fabricated in 163 mu m thick borosilicate glass substrates. The dielectric breakdown strength of substrates with filaments longer than 30 mu m could be very well described by a 1/root filament length-dependence predicted by the model Schneider, 2013. With filament length these results for the first time a critical energy release rate for dielectric breakdown was determined being 6.30 +/- 0.95 mJ/m.
机译:作为导电细丝的长度的函数测量硼硅酸盐玻璃的介电击穿强度,以便确定用于击穿通道的生长的临界能量释放。 该概念类似于骨折力学中韧性的实验确定,并基于具有空间电荷有限导电性的介电材料中的电能释放速率的Griffith型模型。 通过聚焦 - 离子束铣削和Pt沉积,在163μm厚的硼硅酸盐玻璃基板中制造高达100μm长的导电通道。 具有长于30μm的长度的衬里的介电击穿强度可以通过模型Schneider,2013年推测的1 /根长丝长度依赖性描述。灯丝长度这些结果首次临界能量释放率 确定介电击穿为6.30 +/- 0.95 mj / m。

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