机译:用P-AlGaN层夹选有源区来增加GaN的绿色发光二极管的内部量子效率
Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi Pakistan;
Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi Pakistan;
Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi Pakistan;
Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi Pakistan;
Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi Pakistan;
Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi Pakistan;
InGaN; light-emitting diodes; efficiency; green;
机译:采用可变活性区域改善绿色GaN基发光二极管的内部量子效率
机译:通过采用渐变量子阱和电子阻挡层来增加绿色GaN基发光二极管的内部量子效率
机译:通过厚度分级的厚度/最后屏障和组成渐变电子阻挡层,高内部量子效率的绿色GaN基发光二极管
机译:采用分级孔/屏障/电子阻挡层,增强绿色GaN基发光二极管的内部量子效率
机译:增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:渐变铟组合物P型Ingan层的甘油基绿光二极管量子效率提高
机译:N掺杂Gaas(1-x)p(x)发光二极管外量子效率的压力研究。