机译:通过低流量的中子辐射减少AlGaN / GaN异质结构的反向泄漏电流
China Acad Engn Phys Microsyst &
Terahertz Res Ctr Inst Elect Engn Chengdu 610200 Peoples R China;
China Acad Engn Phys Microsyst &
Terahertz Res Ctr Inst Elect Engn Chengdu 610200 Peoples R China;
China Acad Engn Phys Microsyst &
Terahertz Res Ctr Inst Elect Engn Chengdu 610200 Peoples R China;
China Acad Engn Phys Microsyst &
Terahertz Res Ctr Inst Elect Engn Chengdu 610200 Peoples R China;
China Acad Engn Phys Microsyst &
Terahertz Res Ctr Inst Elect Engn Chengdu 610200 Peoples R China;
Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China;
Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China;
Wuhan Univ Technol Sch Sci Dept Phys Wuhan 430070 Peoples R China;
China Acad Engn Phys Microsyst &
Terahertz Res Ctr Inst Elect Engn Chengdu 610200 Peoples R China;
Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China;
China Acad Engn Phys Microsyst &
Terahertz Res Ctr Inst Elect Engn Chengdu 610200 Peoples R China;
机译:具有Al_2O_3 / Si_3N_4栅极绝缘体的沟道掺杂AlGaN / GaN异质结构场效应晶体管中的高漏极电流密度和降低的栅极泄漏电流
机译:用于抑制AlGaN / GaN异质结构场效应晶体管中栅极漏电流的AlGaN表面控制工艺
机译:AlGaN / GaN异质结构场效应晶体管中的电流崩溃和栅极泄漏电流的机制
机译:欧姆接触位置对AlGaN / GaN异质结构缓冲漏电流的影响
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:用于抑制AlGaN / GaN异质结构场效应晶体管中栅极漏电流的AlGaN表面控制工艺
机译:自对准aLD alOx T栅极绝缘体,用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制