首页> 中文期刊> 《中国物理快报:英文版》 >Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures

Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures

         

摘要

@@ AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques.It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons.

著录项

  • 来源
    《中国物理快报:英文版》 |2008年第3期|1045-1048|共4页
  • 作者单位

    Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

    Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

    Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

    Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

    Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

    Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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