3D numerical modelling of microwave heating of SiC susceptor

摘要

Microwave processing has been gaining popularity owing to its energy saving characteristics which is majorly assisted by using susceptors like SiC. It is imperative to simulate the heating of SiC susceptor to understand its role in the microwave heating process. In this work, finite element simulations are used to predict and analyse microwave heating of SiC cylinders. The effects of varying microwave power and dimension of SiC on heating of SiC are investigated. The value of temperature of SiC observed through COMSOL simulation is validated with experimental results.