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机译:通过椎相控制的外延横向过度生长在溅射AIN / PSS模板上实现的优质GaN倒置者
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangzhou Univ Sch Phys &
Elect Engn Guangzhou 510006 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
Guangdong Acad Sci Guangdong Inst Semicond Ind Technol Guangzhou 510650 Guangdong Peoples R China;
GaN; facet-controlled; epitaxial lateral overgrowth; sputtered AIN; patterned sapphire substrate; MOCVD;
机译:通过椎相控制的外延横向过度生长在溅射AIN / PSS模板上实现的优质GaN倒置者
机译:独立的GaN衬底,采用先进的刻面控制外延横向过长生长技术并掩盖了侧面
机译:使用面控制外延横向过生长(FACELO)的低缺陷密度GaN的制备和表征
机译:氢化物气相外延法制备高质量厚GaN薄膜的横向外延生长
机译:利用外延横向过生长来增加电压的薄硅太阳能电池的设计,制造和分析
机译:接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
机译:外延横向生长的GaN模板上生长的AlxGa1-xN / AlN / GaN异质结构的磁输运性质