机译:通过调节FERMI水平,增强了GaAs纳米线金属半导体 - 半导体 - 金属光电探测器的光反应性
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
Wuhan Univ Sch Phys &
Technol Minist Educ Key Lab Artificial Micro &
Nanostruct Wuhan 430072 Hubei Peoples R China;
Hunan Univ Sch Phys &
Elect Minist Educ Key Lab Micro Nanooptoelect Devices Changsha 410082 Hunan Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Wuhan Univ Sch Phys &
Technol Minist Educ Key Lab Artificial Micro &
Nanostruct Wuhan 430072 Hubei Peoples R China;
Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;
Changchun Univ Sci &
Technol State Key Lab High Power Semicond Lasers Changchun 130022 Jilin Peoples R China;
GaAs nanowire photodetector; doping; Fermi level; Schottky contact; built-in electric field;
机译:通过调节FERMI水平,增强了GaAs纳米线金属半导体 - 半导体 - 金属光电探测器的光反应性
机译:基于二维电子 - 空穴管结构提高GaAs / AlgaAs / GaAs纳米线光电探测器的性能
机译:基于单个CdTe纳米线光电探测器的压电光电增强的光响应性
机译:深能级陷阱对InAlAs / InGaAs金属-半导体-金属光电探测器中空穴传输的影响
机译:光电探测器图案Gaassb(N)纳米线的设计与表征
机译:用于室温高性能近红外光电探测器的单晶InGaAs纳米线
机译:限制在超波长金属狭缝内的锗单纳米线光电探测器的增强的光响应性