首页>
外国专利>
Method for in-situ determination of the fermi level in GaAs and similar materials by photoreflectance
Method for in-situ determination of the fermi level in GaAs and similar materials by photoreflectance
展开▼
机译:用光反射原位测定GaAs和类似材料中费米能级的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for in-situ determination by photoreflectance of the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs and related materials, in which a probe beam of monochromatic light and a modulated pump beam from a pump source are directed onto a sample, and the measured barrier height V.sub.m =V.sub.F -V.sub.S is obtained from the information in the reflected light, where V.sub.S represents the surface voltage effects on the sample by the photoreflectance, whereby V.sub.m approaches V.sub.F as V.sub.S approaches zero during repeated tests in which a parameter such as temperature affecting the numerical value of V.sub.S is changed until there is flattening of the curve illlustrating V.sub.m as a function of the parameter.
展开▼