Determination of the Fermi level position for neutron irradiated high resistivity silicon detectors and materials using the transient charge technique (TChT)

摘要

The transient charge technique (TChT) has been used in this work to study the electrical properties in both space charge region (SCR) and electrical neutral bulk (ENB) of neutron irradiated high resistivity (4--6 k(Omega)-cm) silicon particle detectors. Detectors irradiated to various neutron fluences were measured by TChT at various biases and temperatures below the room temperature. The Fermi level, obtained from the Arrhenius plot of the time constant of the slow component of the charge shape, has been found to stabilize around E(sub c)-0.47 to 0.50 eV at high fluences ((Phi)n>10(sup 13) n/cm(sup 2)). The resistivity of the ENB has been found greater than 300 k(Omega)-cm at high fluences.