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首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions
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Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions

机译:硅和氧气掺杂剂对苛刻环境条件下氢化非晶碳稳定性的影响

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摘要

Harsh environments pose materials durability challenges across the automotive, aerospace, and manufacturing sectors, and beyond. While amorphous carbon materials have been used as coatings in many environmentally-demanding applications owing to their unique mechanical, electrical, and optical properties, their limited thermal stability and high reactivity in oxidizing environments have impeded their use in many technologies. Silicon-and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) films are promising for several applications because of their higher thermal stability and lower residual stress compared to hydrogenated amorphous carbon (a-C:H). However, an understanding of their superior thermo-oxidative stability compared to a-C:H is lacking, as it has been inhibited by the intrinsic challenge of characterizing an amorphous, multi-component material. Here, we show that introducing silicon and oxygen in a-C:H slightly enhances the thermal stability in vacuum, but tremendously increases the thermo-oxidative stability and the resistance to degradation upon exposure to the harsh conditions of low Earth orbit (LEO). The latter is demonstrated by having mounted samples of a-C:H:Si:O on the exterior of the International Space Station via the Materials International Space Station (MISSE) mission 7b. Exposing lightly-doped a-C:H:Si:O to elevated temperatures under aerobic conditions or to LEO causes carbon volatilization in the near-surface region, producing a silica surface layer that protects the underlying carbon from further removal. These findings provide a novel physically-based understanding of the superior stability of a-C:H:Si:O in harsh environments compared to a-C:H. (C) 2017 Elsevier Ltd. All rights reserved.
机译:恶劣环境占据了汽车,航空航天和制造业,超越的材料耐用性挑战。虽然由于其独特的机械,电气和光学性能,但由于其独特的机械,电气和光学性能,因此在许多环境苛刻的应用中使用了非晶碳材料,但它们在许多技术中使用它们有限的热稳定性和高反应性。硅和含氧氢化非晶碳(A-C:H:Si:O)薄膜对几种应用具有多种应用,因为与氢化非晶碳(A-C:H)相比,其较高的热稳定性和较低的残余应力。然而,与A-C:H相比,对其优异的热氧化稳定性的理解缺乏,因为它已经受到无定形的多组分材料的内在挑战所抑制的。在这里,我们表明,在A-C:H中引入硅和氧气略微增强真空的热稳定性,但在暴露于低地球轨道(Leo)的恶劣条件下,巨大地增加了热氧化稳定性和抗降解的抗性。通过材料的A-C:H:Si:o在国际空间站的外部通过材料国际空间站(MISSE)使命7B来证明后者。暴露在有氧条件下的升高的温度或Leo在近表面区域中曝光轻掺杂的A-C:h:Si:O至Leo,产生碳挥发,从而产生保护下层碳的二氧化硅表面层。这些发现提供了对基于物理的理解,与A-C:H相比,恶劣环境中的A-C:H:Si:O中的卓越稳定性。 (c)2017 Elsevier Ltd.保留所有权利。

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