机译:硅/间隙杂体层的可调电子性质:电场或双轴拉伸应变的影响
State Key Lab Adv Power Transmiss Technol Beijing 102209 Peoples R China;
Chinese Acad Sci Suzhou Inst Biomed Engn Suzhou 215163 Peoples R China;
State Key Lab Adv Power Transmiss Technol Beijing 102209 Peoples R China;
State Key Lab Adv Power Transmiss Technol Beijing 102209 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Guilin Univ Elect Technol Sch Mech &
Elect Engn Guilin 541004 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
机译:硅/间隙杂体层的可调电子性质:电场或双轴拉伸应变的影响
机译:电场和菌株的新型G-ZnO / 1T-TIS2 VDW异质结构的可调电子特性:带隙和带对准类型的交叉
机译:带对准工程,SB / PTTE2 VAN DER WALS的电子和光学性能异质结构:电场和双轴应变的影响
机译:双轴拉伸应变对电应力产生的Si / SiO
机译:窄带隙半导体和伪间隙系统的电子结构和热电性能。
机译:InSe-GeTe异质双分子层通过双轴应变施加的电子和光学性质
机译:mos2 / mX2异质层:带隙工程通过 拉伸应变或外部电场