Impurity-Controlled Crystal Growth in Low-Dimensional Bismuth Telluride

摘要

Topological insulators, such as layered Bi_(2)Te_(3), exhibit extraordinary properties, manifesting profoundly only at nanoscale thicknesses. However, it has been challenging to synthesize these structures with controlled thicknesses. Here, control over the thickness of solvothermally grown Bi_(2)Te_(3) nanosheets is demonstrated by manipulating the crystal growth through select and controlled impurity atom addition. By a comprehensive analysis of the growth mechanism and intentional addition of Fe impurity, we demonstrate that the nucleation and growth of few-layer nanosheets of Bi_(2)Te_(3) can be stabilized in solution. Via optimization of the Fe concentration, nanosheets thinner than 6 nm, and as thin as 2 nm, can be synthesized. Such thicknesses are smaller than the anticipated critical thickness for the transition of topological insulators to the quantum spin Hall regime.