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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Indacenodithiazole-Ladder-Type Bridged Di(thiophene)-Difluoro-Benzothiadiazole-Conjugated Copolymers as Ambipolar Organic Field-Effect Transistors
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Indacenodithiazole-Ladder-Type Bridged Di(thiophene)-Difluoro-Benzothiadiazole-Conjugated Copolymers as Ambipolar Organic Field-Effect Transistors

机译:吲哚代膦腈型桥型桥接二(噻吩) - 富氟 - 苯并噻唑 - 缀合的共聚物作为Ambipolar有机场效应晶体管

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A series of four donor-acceptor conjugated copolymers P1-P4 with linear and branched side chains based on a ladder-type indacenodithiazole (IDTz) moiety containing an electron-deficient thiazole unit are copolymerized with di-2-thienyl-2,1,3-benzothiadiazole (DTBT) and 4,7-di(thien-2-yl)-5,6-difluoro-2,1,3-benzothiadiazole (DTBTff) as building blocks. Their optical, electrochemical, and thermal properties and charge transport behavior in organic field-effect transistors (OFETs) are studied. All copolymers exhibit nearly identical features in solution with good solubility. In the solid state, P1 does not exhibit a significant shift, while P3 shows a 27 nm red shift, thus illustrating the influence of the side chain. In the case of copolymers P1 and P2 having linear side chains, there is a clear effect of fluorination on the film morphology, while it is less pronounced in the case of polymers P3 and P4 having branched side chains. All copolymers P1-P4 have similar highest occupied molecular orbitals regardless of fluorination, while fluorinated polymers P2 and P4 result in an increase in the lowest unoccupied molecular orbital. In addition, density functional theory calculations reveal that the energy levels of IDTz are down-shifted in comparison to its IDT counterpart containing an electron-rich thiophene unit. OFETs based on all copolymers exhibit ambipolar behavior; among the four copolymers, P2 having a linear dodecyl side chain exhibits remarkable transport properties with saturated hole mobility as high as 0.87 cm(2) V-1 s(-1), while P3 exhibits the highest electron mobility of up to 0.50 cm(2) V-1 s(-1). Our results set an interesting path to further utilize the electron-deficient thiazole block in semiconducting materials.
机译:基于含有电子缺乏噻唑单元的梯型茚磺基吲哚(IDTZ)部分的梯形吲哚代苯二唑(IDTZ)部分的一系列四种供体缀合的共聚物P1-P4与DI-2-Thienyl-2,1,3共聚 - 苯并噻唑(DTBT)和4,7-DI(Thien-2-Y1)-5,6-二氟-2,1,3-苯并噻唑(DTBTFF)作为积木。研究了有机场效应晶体管(OFET)中的光学,电化学和热性能和电荷传输行为。所有共聚物均具有良好的溶解度溶液中几乎相同的特征。在固态中,P1不表现出显着的偏移,而P3表示27nm的红色变速,从而说明侧链的影响。在具有线性侧链的共聚物P1和P2的情况下,氟化对薄膜形态存在明显的作用,而在具有支链侧链的聚合物P3和P4的情况下,它的含量不太明显。无论氟化如何,所有共聚物P1-P4都具有类似的最高占用的分子轨道,而氟化聚合物P2和P4导致最低未占用的分子轨道增加。此外,密度函数理论计算表明,与其富含电子的噻吩单元的IDT对应物相比,IDTZ的能量水平越来越偏移。基于所有共聚物的ofets表现出余辉行为;在四种共聚物中,具有线性十二烷基侧链的P2具有显着的运输性能,具有高达0.87cm(2)V-1 S(-1)的饱和空穴迁移率,而P3表现出高达0.50cm的最高电子迁移率( 2)V-1 S(-1)。我们的结果设定了一个有趣的路径,以进一步利用半导体材料中的电子缺陷噻唑块。

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