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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Electronic Structure and Phase Stability of Yb-Filled CoSb3 Skutterudite Thermoelectrics from First-Principles
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Electronic Structure and Phase Stability of Yb-Filled CoSb3 Skutterudite Thermoelectrics from First-Principles

机译:从第一原理的YB填充COSB3 Skutterudite热电的电子结构和相位稳定性

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Filling the large voids in the crystal structure of the skutterudite CoSb3 with rattler atoms R provides an avenue for both increasing carrier concentration and disrupting lattice heat transport, leading to impressive thermoelectric performance. While the influence of R on the lattice dynamics of skutterudite materials has been well studied, the phase stability of R-filled skutterudite materials and the influence of the presence and ordering of R on the electronic structure remain unclear. Here, focusing on the Ybfilled skutterudite YbxCo4Sb12, we employ first-principles methods to compute the phase stability and electronic structure. Yb-filled CoSb3 exhibits (1) a mild tendency for phase separation into Yb-rich and Yb-poor regions and (2) a strong tendency for chemical decomposition into Co-Sb and Yb-Sb binaries (i.e.,CoSb3, CoSb2, and YbSb2). We find that, at reasonable synthesis temperatures, configurational entropy stabilizes single-phase solid solutions with limited Yb solubility, in agreement with experiments. Filling CoSb 3 with Yb increases the band gap, enhances the carrier effective masses, and generates new low-energy "emergent" conduction band minima, which is distinct from the traditional band convergence picture of aligning the energies of existing band extrema. The explicit presence of R is necessary to achieve the emergent conduction band minima, though the rattler ordering does not strongly influence the electronic structure. The emergent conduction bands are spatially localized in the Yb-rich regions, unlike the delocalized electronic states at the Brillouin zone center that form the unfilled skutterudite band edges.
机译:填充烤刀原子R的Skutterudite COSB3的晶体结构中的大空隙为增加的载流子浓度和破坏格式热传输的渠道提供渠道,导致令人印象深刻的热电性能。虽然R在Skutterudite材料的晶格动力学对晶石动力学的影响得到了很好的研究,但填充的Skutterudite材料的相位稳定性以及R在电子结构上的存在和排序的影响仍然尚不清楚。这里,专注于Ybfilled Skutterudite YBXCO4SB12,我们采用了第一原理方法来计算相位稳定性和电子结构。填充的COSB3表现出(1)对富含Yb的相分离和(2)化学分解成CO-SB和YB-SB二进制水(即,COSB3,COSB2和YBSB2)。我们发现,在合理的合成温度下,配置熵稳定单相固体溶液,与实验一致。用Yb填充COSB 3增加带隙,增强载流子有效质量,并产生新的低能量“紧急”传导极限,这与传统的频带收敛图片不同,这些传统带收敛图像对准现有频段极值的能量。 r是必要的,以实现突出的传导频带最小值是必要的,尽管响尾蛇的命令不会强烈影响电子结构。紧急导电带在富含Yb的地区的空间上局部地,与布里渊区中心的被剥离的电子状态不同,形成未填充的Skutterudite带边缘。

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