首页> 外国专利> Co-Mo Co-Mo Co-Mo COMPOSITE METALIZING METHOD FOR SKUTTERUDITE THERMOELECTRIC MATERIALS Co-Mo COMPOSITE METALIZING STRUCTURE FOR SKUTTERUDITE THERMOELECTRIC MATERIALS STRUCTURE AND MANUFACTURING METHOD FOR SKUTTERUDITE THERMOELECTRIC MATERIALS WITH Co-Mo COMPOSITE METALIZING

Co-Mo Co-Mo Co-Mo COMPOSITE METALIZING METHOD FOR SKUTTERUDITE THERMOELECTRIC MATERIALS Co-Mo COMPOSITE METALIZING STRUCTURE FOR SKUTTERUDITE THERMOELECTRIC MATERIALS STRUCTURE AND MANUFACTURING METHOD FOR SKUTTERUDITE THERMOELECTRIC MATERIALS WITH Co-Mo COMPOSITE METALIZING

机译:钴硼钼矿热电材料的Co-Mo钴钼钼复合金属化方法

摘要

The present invention relates to a metallization method capable of improving efficiency by preventing diffusion of a scatterudite thermoelectric material, comprising: a preparation step of preparing Mo and Co as powder; A mixing step of mixing Mo powder and Co powder; A first sintering step of first sintering the mixed powder to form a Co-Mo composite metal film; And a bonding step of bonding the Co-Mo composite metal film to the surface of the scatteredite thermoelectric material to form a metalizing layer. In the present invention, Mo, which has a high sintering temperature, can be easily metallized on a scatteredite thermoelectric material, and cracks due to a difference in thermal expansion coefficient are not generated at the interface. In addition, compared to the conventional Ti metalizing layer applied to prevent diffusion, it is possible to easily form a metalizing layer having excellent diffusion preventing effect in the sintering process and diffusion preventing effect in an actual use environment. Furthermore, compared to the conventional Ti metalizing layer applied to prevent diffusion, a metalizing layer having a lower contact resistance can be easily formed.
机译:本发明涉及一种能够通过防止飞散的热电材料的扩散来提高效率的金属化方法,该方法包括:制备作为粉末的Mo和Co的制备步骤;将Mo粉和Co粉混合的混合步骤;第一烧结步骤,首先烧结混合粉末以形成Co-Mo复合金属膜。以及将所述Co-Mo复合金属膜接合至所述飞散热电材料的表面以形成金属化层的接合步骤。在本发明中,具有高烧结温度的Mo可以容易地在飞散的热电材料上金属化,并且在界面处不产生由于热膨胀系数的差异而引起的裂纹。另外,与用于防止扩散的传统的Ti金属化层相比,可以容易地形成在烧结过程中具有优异的扩散防止效果和在实际使用环境中具有扩散防止效果的金属化层。此外,与用于防止扩散的常规Ti金属化层相比,可以容易地形成具有较低接触电阻的金属化层。

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