机译:边缘端接的MOS2纳米片,具有在石墨烯上的膨胀层间间隔,以提高超级电容性能
Northwestern Polytech Univ Ctr Nano Energy Mat Sch Mat Sci &
Engn State Key Lab Solidificat Proc Xian 710072 Peoples R China;
Northwestern Polytech Univ Ctr Nano Energy Mat Sch Mat Sci &
Engn State Key Lab Solidificat Proc Xian 710072 Peoples R China;
Northwestern Polytech Univ Ctr Nano Energy Mat Sch Mat Sci &
Engn State Key Lab Solidificat Proc Xian 710072 Peoples R China;
Northwestern Polytech Univ Ctr Nano Energy Mat Sch Mat Sci &
Engn State Key Lab Solidificat Proc Xian 710072 Peoples R China;
Northwestern Polytech Univ Ctr Nano Energy Mat Sch Mat Sci &
Engn State Key Lab Solidificat Proc Xian 710072 Peoples R China;
Northwestern Polytech Univ Ctr Nano Energy Mat Sch Mat Sci &
Engn State Key Lab Solidificat Proc Xian 710072 Peoples R China;
MoS2@graphene nanoarchitecture; Edge-terminated MoS2 nanosheets; Expanded interlayer spacing; Supercapacitors;
机译:边缘端接的MOS2纳米片,具有在石墨烯上的膨胀层间间隔,以提高超级电容性能
机译:铈(III) - 具有扩展的中间层间距和过氧化物酶模拟性的掺杂MOS2纳米片,用于比色测定过氧化氢的测定
机译:MOS2纳米片,具有扩展的层间间距,用于增强钠储存
机译:通过微波辅助合成在石墨烯上生长的免费MOS2纳米片作为高效催化剂的氢进化
机译:使用2D半导体层间改进MOS2晶体管中的触点和装置性能
机译:边缘终止的二硫化钼中间层间距为9.4Å用于电化学制氢
机译:具有膨胀层间距的N / S共掺杂石墨烯纳米片构成的三维碳框架有助于钾离子储存