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Dielectric and optical properties of Ni doped Na0.5Bi0.5TiO3

机译:Ni掺杂Na0.5bi0.5ti3的介电和光学性质

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Polycrystalline Ni doped Na.5Bi0.5TiO3 samples (Na0.5Bi0.5)Ti1-xNixO3, (x = 0.5, 0.10, 0.15) have been prepared by solid state reaction. The appearance of the additional peak in X-ray diffraction pattern indicates the ordering of Ti4+ and Ni2+ ions. Polygonal grains are converted into flakes with an increase of Ni concentration. Replacement of T4+ by Ni2+ strongly modifies the relative contribution of two peaks in the Raman bands within 200-400 cm(-1). Oxygen vacancy is observed in X-ray photoelectron spectrum to maintain charge neutrality due to aliovalent doping. Broad diffuse phase transition centered at the dielectric constant maximum indicates relaxor behaviour. Comparison between impedance and electric modulus spectrum suggests non-Debye relaxation. The ac conductivity follows the power law with the frequency exponent lies 0.52 - 0.72. The generation of holes by divalent Ni dopant at tetravalent Ti sites enhances optical band gap.
机译:多晶Ni掺杂Na.5bi0.5tio3样品(Na0.5bi0.5)Ti1-XnixO3,(x = 0.5,0.10,0.15)已通过固态反应制备。 X射线衍射图中的附加峰的外观表示Ti4 +和Ni2 +离子的排序。 随着Ni浓度的增加,多边形晶粒被转化为薄片。 通过Ni2 +更换T4 + +强烈改变了200-400cm(-1)内拉曼带中的两个峰的相对贡献。 在X射线光电子体光谱中观察到氧气空位以维持由于渗透性掺杂引起的电荷中性。 以介电常数最大值为中心的宽漫射相转变表示松弛器行为。 阻抗和电模量谱之间的比较表明非德义弛豫。 交流电导率跟随电力法,频率指数位于0.52-0.72。 在四价Ti位点处由二价Ni掺杂剂产生孔的产生增强了光学带隙。

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