Nonvolatile eight-state memory prototype based on single-phase multiferroic hexaferrite at room temperature

摘要

Multiferroic materials exhibit both ferroelectricity and ferromagnetism, and their magnetoelectric effects can be modulated by both magnetic and electric fields. Thus, they exhibit great potential in next-generation data memory devices. In this study, we implemented an eight-state memory prototype based on room-temperature single-phase multiferroic Sr3Co2Fe24O41. Data were imported by a poling procedure with electric and magnetic fields and derived visa electric polarization, P-m, or the magnetoelectric coefficient, alpha(m). This memory prototype possesses the advantages of a single structure, being easy to integrate, having a high storage capacity and a high stability. In this research, we enriched the magnetoelectric coupling performance of multiferroic materials, which demonstrates their possibilities for applications in the memory field.