Room-temperature nonvolatile four-state memory based on multiferroic Sr3Co2Fe21.6O37.4

摘要

Single-phase multiferroic hexaferrite Sr3Co2Fe21.6O37.4 was prepared by using a conventional solid-state reaction. The maximum electric polarization and magnetoelectric coefficient were P-m = 12.8 mu C/m(2) and alpha(m) = 600 ps/m, respectively. We found that the as-prepared specimen exhibited four different electric phase states from 0 to 1 T. Furthermore, the magnetic field and electric field poled the specimen's four different electric phase states and exhibited four different magnetoelectric effects. Based on these characteristics, a nonvolatile four-state memory device was implemented at room temperature. The information is written by the magnetic field and electric field in the poling process and read out by alpha(m) with a small scanning field. This kind of nonvolatile four-state memory device has the benefits of having a simple structure and high storage density, it is easy to integrate, and it can be performed at room temperature. Our work enriched the magnetoelectric effect of Sr3Co2Fe24O41 and will promote the application of multiferroic hexaferrites for information storage devices. (C) 2018 Elsevier B.V. All rights reserved.