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Room temperature densified H3BO3 microwave dielectric ceramics with ultra-low permittivity and high quality factor for dielectric substrate applications

机译:室温致密化H3BO3微波介质陶瓷,具有超低介电常数和高质量因子的介电基板应用

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摘要

The densification and microwave dielectric properties of H3BO3 ceramics prepared by dry pressing at room temperature were studied. The results show that pressure is the key factor of densification of H3BO3 ceramics. No second phase appears in all the as-fabricated H3BO3 ceramic samples. A dense H3BO3 ceramic (relative density similar to 97.6%) was obtained by uniaxial compression of 384 MPa for 300s and the optimal microwave dielectric properties are epsilon(r) = 2.83, Q x f = 59,400 GHz (f = 16 GHz), tau(f) = - 91 ppm/degrees C, which make it as a prospective candidate for microwave and millimeter-wave devices such as substrates for 5G communication technology.
机译:研究了在室温下通过干压制备的H3BO3陶瓷的致密化和微波介电性能。 结果表明,压力是H3BO3陶瓷致密化的关键因素。 所有AS制造的H3BO3陶瓷样品中没有第二阶段出现。 通过单轴压缩获得384MPa的致密H3BO3陶瓷(相对密度类似于97.6%,最佳微波介电性质是ε(R)= 2.83,Q XF = 59,400GHz(F = 16GHz),TAU( f)= - 91ppm /°C,其作为微波和毫米波装置的预期候选者,例如用于5G通信技术的基板。

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