Non-Destructive Inverse Modeling of Chi interconnect structure in 90nm Technology Node

摘要

Width and height of copper interconnect largely depend on the pitch of the interconnect because fluctuation due to OPC and CMP process is very sensitive to the pitch of the interconnect as well as local layout patters around the interconnect. An object of the present study is to provide a capacitance measurement circuit which decomposes total parasitic capacitance into intralayer and interlayer coupling capacitance, respectively. In addition, we demonstrate non-destructive inverse modeling of copper interconnect cross-sectional structure, which reporoduces the pitch dependence of the intralayer and interlayer coupling capacitance in 90nm technology node process. The proposed approach ensures the accuracy of LPE within about 1% error.