High frequency channel noise measurement and characterization in deep submicron MOSFETs

摘要

We evaluate and compare several closed form expressions of channel thermal noise used in circuits with MOSFET devices operating at high frequencies. To verify and compare these models, NMOS devices with channel widths of 120 μm (20 μm * 6 fingers) and channel lengths of 0.18, 0.36, and 0.54 μm were tested. A comparison of extracted and calculated noise data indicates that a model based on drain and overdrive voltages of short channel devices operating at RF frequencies provides the best match between extracted and calculated results for the channel thermal noise over a frequency range of 3 to 6 GHz and a gate overdrive voltage range of 0.2 to 1.2 V.