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Design issues of a low power wideband frequency doubler implementation in 0.18 μm CMOS

机译:在0.18μmCMOS中实现低功耗宽带倍频器的设计问题

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This paper presents design issues of a wideband, low power implementation of a frequency doubler (FD) in a commercial 0.18 μm CMOS process. The FD consists of two identical unbalanced source-coupled pairs with different width-to-length (W/L) ratios, whose inputs are connected in parallel and its output is taken single-ended. Amplitude and phase mismatch at the differential input are considered and it is shown that there is minimal effect on the output amplitude of the 2nd harmonic for a 5 dB difference in input amplitude and a 45° difference in phase. Under matched conditions, the implemented frequency doubler can be operated at a supply voltage as low as 1 V, which corresponded to a power consumption of less than 1 mW, has a 3 dB output bandwidth of 4 GHz and a conversion gain of 2.5 dB. At a supply voltage of 1.2 V, the frequency doubler consumed 1.32 mW, has a 3 dB output bandwidth of 3 GHz and a conversion gain of 5 dB. The phase niose degradation is 6 dB in both cases.
机译:本文介绍了在商用0.18μmCMOS工艺中宽带,低功耗实现倍频器(FD)的设计问题。 FD由两个相同的不平衡源耦合对组成,它们具有不同的宽长比(W / L),其输入并联连接,其输出为单端。考虑到差分输入处的幅度和相位失配,并且表明对于输入幅度相差5 dB和相位相差45°的情况,对二次谐波的输出幅度影响最小。在匹配的条件下,实现的倍频器可以在低至1 V的电源电压下工作,这相当于小于1 mW的功耗,具有4 GHz的3 dB输出带宽和2.5 dB的转换增益。在1.2 V的电源电压下,倍频器消耗1.32 mW,具有3 GHz的3 dB输出带宽和5 dB的转换增益。在两种情况下,相位噪声降低均为6 dB。

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